IPB055N03LG 데이터 시트보기 (PDF) - Infineon Technologies
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IPB055N03LG Datasheet PDF : 10 Pages
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Parameter
Symbol Conditions
IPP055N03L G
IPB055N03L G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=15 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=15 V, V GS=10 V,
-
t d(off)
I D=30 A, R G=1.6 Ω
-
tf
-
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q gs
-
Q g(th)
-
Q gd
V DD=15 V, I D=30 A,
-
Q sw
V GS=0 to 4.5 V
-
Qg
-
V plateau
-
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
Output charge
Q oss
V DD=15 V, V GS=0 V
-
Reverse Diode
Diode continuous forward current I S
-
T C=25 °C
Diode pulse current
I S,pulse
-
Diode forward voltage
V SD
V GS=0 V, I F=30 A,
T j=25 °C
-
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
6) See figure 16 for gate charge parameter definition
2400
920
49
6.7
5.2
25
4.0
3200 pF
1200
-
- ns
-
-
-
7.5
- nC
3.8
-
3.5
-
7.1
-
15
-
3.1
-V
31
-
13
- nC
24
-
-
50 A
-
350
0.88
1.1 V
-
20 nC
Rev. 1.03
page 3
2009-09-22
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