IPB072N15N3G(2010) 데이터 시트보기 (PDF) - Infineon Technologies

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IPB072N15N3G
(Rev.:2010)

OptiMOS®3 Power-Transistor

Infineon Technologies 

IPB072N15N3 G IPP075N15N3 G

IPI075N15N3 G

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

-85B=1<B5C9CD1>3 5 :E>3 D9? > 3 1C5 R `T@8

%

-85B=1<B5C9CD1>3 5 :E>3 D9? >

MYNUQZ`

R `T@6 =9>9=1<6? ? D@B9>D

 3 = 3 ? ? <9>7 1B51+#

%

%

(&- A'K



%

,(

Electrical characteristics, 1DT V   T  E><5CC? D85BG9C5 C@53 96954

Static characteristics

 B19> C? EB3 5 2 B51;4? G> F? <D175

V "7G#9HH V =H  .  I 9 =

)-(

%

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*

+

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I 9HH

V 9H   .  V =H  . 

T V   T

%

(&)

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T V   T

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!1D5 C? EB3 5 <51;175 3 EBB5>D

I =HH

V =H   .  V 9H  .

%

 B19> C? EB3 5 ? > CD1D5 B5C9CD1>3 5

R 9H"[Z# V =H  .  I 9    

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R=

%

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g R_

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+#  5F93 5 ? >   == H   == H  == 5@? HI )   +  G9D8  3 =* ? >5 <1I5B   V = D893 ; 3 ? @@5B1B51 6? B4B19>

3 ? >>53 D9? > )   9CF5BD93 1<9> CD9<<19B

+ 5F   

@175 

  

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