IPB072N15N3G(2010) 데이터 시트보기 (PDF) - Infineon Technologies

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IPB072N15N3G
(Rev.:2010)

OptiMOS®3 Power-Transistor

Infineon Technologies 

Parameter

Symbol Conditions

IPB072N15N3 G IPP075N15N3 G

IPI075N15N3 G

min.

Values

typ.

Unit

max.

Dynamic characteristics

#>@ED3 1@13 9D1>3 5

( ED@ED3 1@13 9D1>3 5

+ 5F5BC5 DB1>C65B3 1@13 9D1>3 5

-EB> ? > 45<1I D9=5

+ 9C5 D9=5

-EB> ? 6645<1I D9=5

1<<D9=5

C U__

%

C [__

V =H  .  V 9H   . 

f & " J

%

C ^__

%

t P"[Z#

%

t^

V 99   .  V =H  . 

%

t P"[RR#

I 9     R =  "

%

tR

%

-,/(

.+0

)(

*-

+-

,.

),

% \<

%

%

+0 Z_

-*

.1

*)

!1D5  81BS5  81B13 D5B9CD93 C,#

!1D5 D? C? EB3 5 3 81B75

!1D5 D? 4B19> 3 81B75

, G9D3 89>7 3 81B75

!1D5 3 81B75 D? D1<

!1D5 @<1D51E F? <D175

( ED@ED3 81B75

Q S_

%

Q SP

%

Q _c

V 99   .  I 9    

V =H  D?  .

%

QS

%

V \XM`QMa

%

Q [__

V 99   .  V =H  .

%

+(

,( Z8

))

)/

*-

+-

/(

1+

-&-

%J

)/1 *+1 Z8

Reverse Diode

 9? 45 3 ? >D9>? EC6? BG1B4 3 EBB5>D

 9? 45 @E<C5 3 EBB5>D

 9? 45 6? BG1B4 F? <D175

+ 5F5BC5 B53 ? F5BI D9=5

+ 5F5BC5 B53 ? F5BI 3 81B75

IH

I H$\aX_Q

V H9

t ^^

Q ^^

T 8   T

V =H  .  I <    

T V   T

V G   .  I <4I H

Pi <'Pt     V C

%

%

)(( 6

%

%

,((

%

)

)&* J

%

),.

% Z_

%

,/0

% Z8

,# , 55 697EB5  6? B71D5 3 81B75 @1B1=5D5B4569>9D9? >

+ 5F   

@175 

  

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