IPB072N15N3G 데이터 시트보기 (PDF) - Infineon Technologies
부품명
상세내역
제조사
IPB072N15N3G Datasheet PDF : 11 Pages
| |||
Parameter
Symbol Conditions
IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=75 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=75 V, V GS=10 V,
-
t d(off)
I D=100 A, R G=1.6 Ω
-
tf
-
5470
638
10
25
35
46
14
- pF
-
-
38 ns
52
69
21
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
Q gd
-
Q sw
V DD=75 V, I D=100 A,
V GS=0 to 10 V
-
Qg
-
V plateau
-
Q oss
V DD=75 V, V GS=0 V
-
30
40 nC
11
17
25
35
70
93
5.5
-V
179
239 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=100 A,
T j=25 °C
t rr
V R=75 V, I F=I S,
Q rr
di F/dt =100 A/µs
-
-
100 A
-
-
400
-
1
1.2 V
-
146
- ns
-
478
- nC
4) See figure 16 for gate charge parameter definition
Rev. 2.03
page 3
2008-07-15
Share Link: 