IPB072N15N3G 데이터 시트보기 (PDF) - Infineon Technologies
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IPB072N15N3G Datasheet PDF : 11 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=100 A; V GS=10 V
20
IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
3.5
2700 µA
15
3
270 µA
2.5
10
2
98%
typ
1.5
5
1
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
103
102
175 °C
25°C, 98%
Coss
175°C, 98%
102
101
25 °C
101
0
Rev. 2.03
Crss
20
40
60
80
100
V DS [V]
100
0
page 6
0.5
1
1.5
V SD [V]
2
2008-07-15
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