IPB072N15N3G 데이터 시트보기 (PDF) - Infineon Technologies
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IPB072N15N3G Datasheet PDF : 11 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
1000
100
10
25 °C
100 °C
125 °C
IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G
14 Typ. gate charge
V GS=f(Q gate); I D=100 A pulsed
parameter: V DD
10
120 V
8
75 V
6
30 V
4
2
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
0
1000
0
20
40
60
80
Q gate [nC]
16 Gate charge waveforms
170
V GS
165
160
155
150
V g s(th)
145
140
Q g(th)
135
-60 -20
20
60 100 140 180
T j [°C]
Q gs
Rev. 2.03
page 7
Qg
Q sw
Q gd
Q gate
2008-07-15
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