NGTB20N135IHRWG 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
NGTB20N135IHRWG Datasheet PDF : 10 Pages
| |||
NGTB20N135IHRWG
TYPICAL CHARACTERISTICS
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
5
10000
Eoff
1000
td(off)
tf
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 20 A
15 25 35 45 55 65 75 85
RG, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
100
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 20 A
10
5 15 25 35 45 55 65 75 85
RG, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
1.8
1.6
1.4
Eoff
1.2
1
0.8
0.6
IC = 20 A
0.4
VGE = 15 V
TJ = 150°C
0.2
Rg = 10 W
0
250 300 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
1000
td(off)
tf
100
IC = 20 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
250 300 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
100
10
dc operation
1 ms 100 ms
50 ms
1000
VGE = 15 V, TC = 125°C
100
1
Single Nonrepetitive
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
10
1
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
www.onsemi.com
5
Share Link: 