NGTB20N135IHRWG 데이터 시트보기 (PDF) - ON Semiconductor
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NGTB20N135IHRWG Datasheet PDF : 10 Pages
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NGTB20N135IHRWG
TYPICAL CHARACTERISTICS
140
120
100
TC = 80°C
80
TC = 110°C
60
40
20
VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W,
VGE = 0/15 V, Tcase = 80°C or 110°C
0 (as noted), D = 0.5
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 19. Collector Current vs. Switching
Frequency
1650
1600
1550
1500
1450
1400
1350
1300
−40 −15 10 35 60 85 110 135
TJ, JUNCTION TEMPERATURE (°C)
Figure 20. Typical V(BR)CES vs. Temperature
1
50% Duty Cycle
0.1 20%
10%
5%
0.01 2%
0.001
0.000001
Single Pulse
0.00001
RqJC = 0.385
Junction R1 R2
Rn
Ci = ti/Ri
C1 C2
Cn
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Case
Ri (°C/W)
0.005757
0.000122
0.007153
0.010643
0.016539
0.048615
0.019522
0.015924
0.051783
0.025689
0.180713
ti (sec)
0.000174
0.025884
0.001398
0.002971
0.006046
0.006505
0.051225
0.198582
0.193115
1.23097
0.553364
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance
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