NGB8206N 데이터 시트보기 (PDF) - ON Semiconductor
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NGB8206N Datasheet PDF : 9 Pages
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NGB8206N, NGB8206AN
ELECTRICAL CHARACTERISTICS
Characteristic
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
Symbol
Test Conditions
td(off)
tf
td(off)
tf
td(on)
tr
VCC = 300 V, IC = 9.0
A
RG = 1.0 kW, RL = 33
W
VGE = 5 V
VCC = 300 V, IC = 9.0
A
RG = 1.0 kW, L = 300
mH
VGE = 5 V
VCC = 14 V, IC = 9.0 A
RG = 1.0 kW, RL = 1.5
W
VGE = 5 V
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
Min Typ Max Unit
6.0 8.0 10 mSec
6.0 8.0 10
4.0 6.0 8.0
8.0 10.5 14
3.0 5.0 7.0
5.0 7.0 9.0
1.5 3.0 4.5
5.0 7.0 10
1.0 1.5 2.0
1.0 1.5 2.0
4.0 6.0 8.0
3.0 5.0 7.0
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