NGB8206N 데이터 시트보기 (PDF) - ON Semiconductor
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NGB8206N Datasheet PDF : 9 Pages
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NGB8206N, NGB8206AN
TYPICAL ELECTRICAL CHARACTERISTICS
45
VCE = 5 V
40
35
30
25
20
15
TJ = 25°C
10
5
TJ = 175°C
TJ = −40°C
0
0 0.5 1 1.5 2 2.5 3 3.5
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Transfer Characteristics
100000
10000
1000
VCE = −24 V
100
10
VCE = 175 V
1.0
0.1
4
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
2.50
2.25
2.00
Mean + 4 s
Mean
1.75
1.50
Mean − 4 s
1.25
1.00
0.75
0.50
0.25
0
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
10000
1000
100
10
1.0
0.1
0
Figure 9. Gate Threshold Voltage vs.
Temperature
Ciss
Coss
Crss
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
10
tfall
8
tdelay
6
4
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
2
IC = 9.0 A
RL = 33 W
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
12
VCC = 300 V
10 VGE = 5.0 V
RG = 1000 W
8
IC = 9.0 A
L = 300 mH
6
4
tdelay
tfall
2
0
25
50
75
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Inductive Switching Fall Time vs.
Temperature
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