NGB8206N 데이터 시트보기 (PDF) - ON Semiconductor

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NGB8206N

Ignition IGBT

ON Semiconductor 

NGB8206N, NGB8206AN

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

0.000001

Single Pulse

0.00001

0.0001

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TA = P(pk) RqJC(t)

0.001

0.01

0.1

1

t,TIME (S)

Figure 13. Best Case Transient Thermal Resistance

(Non−normalized Junction−to−Case Mounted on Cold Plate)

ORDERING INFORMATION

Device

Package

Shipping†

NGB8206NG

D2PAK

(Pb−Free)

50 Units / Rail

NGB8206NT4G

D2PAK

(Pb−Free)

800 / Tape & Reel

NGB8206ANT4G

D2PAK

(Pb−Free)

800 / Tape & Reel

NGB8206ANTF4G

D2PAK

(Pb−Free)

700 / Tape & Reel

NGB8206ANSL3G

D2PAK

(Pb−Free)

50 Units / Rail

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

7

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