NTMFS4985NFT3G 데이터 시트보기 (PDF) - ON Semiconductor

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NTMFS4985NFT3G

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 65 A

ON Semiconductor 

NTMFS4985NF

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol Value Unit

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 50 V, VGS = 10 V, IL = 33 Apk,

L = 0.1 mH, RG = 25 W)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

EAS

TL

54

mJ

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

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