NTMFS4985NFT3G 데이터 시트보기 (PDF) - ON Semiconductor

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NTMFS4985NFT3G

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 65 A

ON Semiconductor 

NTMFS4985NF

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 2)

Junction−to−Ambient − t v 10 sec

1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.

Symbol

RqJC

RqJA

RqJA

RqJA

Value

5.5

41.15

76.9

17.86

Unit

°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS

VGS = 0 V, ID = 1.0 mA

30

V(BR)DSS/

TJ

ID = 10 mA, referenced to 25°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 24 V

TJ = 25°C

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 3)

IGSS

VDS = 0 V, VGS = ±20 V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 1.0 mA

1.2

Negative Threshold Temperature Coefficient VGS(TH)/TJ

ID = 10 mA, referenced to 25°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 30 A

ID = 15 A

VGS = 4.5 V

ID = 30 A

ID = 15 A

Forward Transconductance

gFS

VDS = 1.5 V, ID = 15 A

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Total Gate Charge

CISS

COSS

CRSS

QG(TOT)

QG(TH)

QGS

QGD

QG(TOT)

VGS = 0 V, f = 1 MHz, VDS = 15 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 10 V, VDS = 15 V,

ID = 30 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

Rise Time

Turn−Off Delay Time

tr

td(OFF)

VGS = 4.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

Fall Time

tf

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

Typ Max Unit

V

15

mV/°C

500

mA

±100

nA

1.6

2.3

V

5.0

mV/°C

2.7

3.4

2.7

mW

4.0

5.0

4.0

43

S

2100

900

pF

60

14.2

1.8

nC

5.9

4.2

30.5

nC

11

32

ns

21

6.0

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