NTMFS4985NFT3G 데이터 시트보기 (PDF) - ON Semiconductor

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NTMFS4985NFT3G

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 65 A

ON Semiconductor 

NTMFS4985NF

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min Typ Max Unit

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

Rise Time

tr

Turn−Off Delay Time

td(OFF)

Fall Time

tf

DRAIN−SOURCE DIODE CHARACTERISTICS

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

8.5

26.5

ns

26

4.5

Forward Diode Voltage

Reverse Recovery Time

Charge Time

Discharge Time

Reverse Recovery Charge

PACKAGE PARASITIC VALUES

VSD

tRR

ta

tb

QRR

VGS = 0 V,

IS = 2 A

TJ = 25°C

TJ = 125°C

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 2 A

0.4

0.7

V

0.33

36.5

18

ns

18.5

32

nC

Source Inductance

LS

Drain Inductance

Gate Inductance

LD

LG

TA = 25°C

Gate Resistance

RG

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

0.65

nH

0.20

1.5

1.0

W

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