SIHFBC40AS-GE3 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIHFBC40AS-GE3

Power MOSFET

Vishay Semiconductors 

www.vishay.com

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFBC40AS, SiHFBC40AS

Vishay Siliconix

VDS

VGS

Rg

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

15 V

VDS

L

Driver

Rg

20 V

tp

D.U.T

IAS

0.01 Ω

+

- VDAD

Fig. 12a - Unclamped Inductive Test Circuit

VDS

tp

IAS

Fig. 12b - Unclamped Inductive Waveforms

S16-0763-Rev. D, 02-May-16

5

Document Number: 91113

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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