BZT52B2V4(2013) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BZT52B2V4 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZT52-Series
Vishay Semiconductors
mA
103
102
IF 10
1
10-1
10-2
10-3
10-4
10-5
0
18114
TJ = 100 °C
TJ = 25 °C
0.2 0.4 0.6 0.8 1V
VF
Fig. 1 - Forward characteristics
Ω
100
5
4
rzj
3
2
10
5
4
3
2
1
0.1 2
18119
51 2
TJ = 25 °C
33
27
22
18
15
12
10
6.8/8.2
6.2
5 10 2
IZ
5 100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
500
400
Ptot
300
200
100
0
0
18888
100
Tamb
200 °C
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Ω
103
7
5
4
Rzj 3
2
47 + 51
43
39
36
102
7
5
4
3
2
10
0.1
18120
2 3 45
Tj = 25 °C
1
2 3 4 5 10
IZ
mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
5
4
3
r
2
zj
100
5
4
3
2
10
5
4
3
2
1
0.1 2
18117
51 2
TJ = 25 °C
5 10 2
I
Z
2.7
3.6
4.7
5.1
5.6
5 100 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Ω
103
5
4
3
Rzth 2
102
5
4
3
2
Rzth
=
RthA
x
VZ
x
ΔVZ
ΔT
j
10
5
4
3 negative
2
1
1
18121
2 3 45
positive
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 1.8, 26-Feb-13
4
Document Number: 85760
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