FDD4141 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDD4141 Datasheet PDF : 6 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250μA, VGS = 0V
-40
V
ID = -250μA, referenced to 25°C
-29
mV/°C
VDS = -32V, VGS = 0V
VGS = ±20V, VDS = 0V
-1
μA
±100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = -250μA
-1
-1.8
-3
V
ID = -250μA, referenced to 25°C
5.8
mV/°C
VGS = -10V, ID = -12.7A
VGS = -4.5V, ID = -10.4A
VGS = -10V, ID = -12.7A,
TJ = 125°C
VDS = -5V, ID = -12.7A
10.1 12.3
14.5
18.0
mΩ
15.3 18.7
38
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
2085 2775 pF
360
480
pF
210
310
pF
4.6
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -20V, ID = -12.7A,
VGS = -10V, RGEN = 6Ω
VGS = 0V to -10V
VGS = 0V to -5V
VDD = -20V,
ID = -12.7A
10
19
ns
7
13
ns
38
60
ns
15
27
ns
36
50
nC
19
27
nC
7
nC
8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = -12.7A (Note 2)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = -12.7A, di/dt = 100A/μs
-0.8 -1.2
V
29
44
ns
26
40
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 52°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 100°C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V.
©2010 Fairchild Semiconductor Corporation
2
FDD4141_F085 Rev.C
www.fairchildsemi.com
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