NX3P1108 데이터 시트보기 (PDF) - NXP Semiconductors.
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NX3P1108 Datasheet PDF : 16 Pages
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NXP Semiconductors
NX3P1108
Logic controlled high-side power switch
10. Recommended operating conditions
Table 6. Recommended operating conditions
Symbol Parameter
Conditions
VI
Tamb
input voltage
ambient temperature
11. Thermal characteristics
Min
Max
Unit
0.9
3.6
V
40
+85
C
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
Typ
[1][2] 84
Unit
K/W
[1] The overall Rth(j-a) can vary depending on the board layout. To minimize the effective Rth(j-a), all pins must have a solid connection to
larger Cu layer areas for example, to the power and ground layer. In multi-layer PCB applications, use the second layer to create a large
heat spreader area right below the device. If this layer is either ground or power, connect it with several vias to the top layer connected
to the device ground or supply. Try not to use any solder-stop varnish under the chip.
[2] Rely on the measurement data given for a rough estimation of the Rth(j-a) in your application. The actual Rth(j-a) value may vary in
applications using different layer stacks and layouts
12. Static characteristics
Table 8. Static characteristics
VI(VIN) = 0.9 V to 3.6 V, unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
Tamb = 25 C Tamb = 40 C to +85 C Unit
Min Typ Max
Min
Max
VIH
HIGH-level EN input
input voltage
VI(VIN) = 0.9 V to 1.1 V
-
-
-
0.8
-
V
VI(VIN) = 1.1 V to 1.3 V
-
-
-
1.0
-
V
VI(VIN) = 1.3 V to 1.8 V
-
-
-
1.1
-
V
VI(VIN) = 1.8 V to 3.6 V
-
-
-
1.1
-
V
VIL
LOW-level EN input
input voltage
VI(VIN) = 0.9 V to 1.1 V
-
-
-
-
0.2 V
VI(VIN) = 1.1 V to 1.3 V
-
-
-
-
0.3 V
VI(VIN) = 1.3 V to 1.8 V
-
-
-
-
0.4 V
VI(VIN) = 1.8 V to 3.6 V
II
input leakage VI(EN) = 0 V or 3.6 V
current
-
-
-
-
- 0.1 -
-
0.45 V
1
A
IGND
ground current VI(EN) = 0 V or 3.6 V; VOUT open;
see Figure 5 and Figure 6
-
-
-
2
-
A
IS(OFF)
OFF-state
leakage
current
VI(VIN) = 3.6 V; VI(EN) = GND;
VI(VOUT) = GND; see Figure 10
and Figure 11
- 0.1 -
-
2.0 A
Rdch
discharge
resistance
VOUT output; VI(VIN) = 3.3 V
- 120 -
-
-
NX3P1108
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 January 2013
© NXP B.V. 2013. All rights reserved.
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