1N5822(1999) 데이터 시트보기 (PDF) - STMicroelectronics
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1N5822 Datasheet PDF : 5 Pages
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Fig. 2-1: Average forward current versus ambient
temperature (δ=0.5) (1N5820/1N5821).
1N582x
Fig. 2-2: Average forward current versus ambient
temperature (δ=0.5) (1N5822).
IF(av)(A)
3.5
3.0
Rth(j-a)=Rth(j-l)=25°C/W
2.5
2.0
Rth(j-a)=80°C/W
1.5
1.0
T
0.5
δ=tp/T
tp
Tamb(°C)
0.0
0
25
50
75
100 125 150
IF(av)(A)
3.5
3.0
Rth(j-a)=Rth(j-l)=25°C/W
2.5
2.0
Rth(j-a)=80°C/W
1.5
1.0
T
0.5
δ=tp/T
tp
Tamb(°C)
0.0
0
25
50
75
100 125 150
Fig. 3-1: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5820/1N5821).
IM(A)
16
14
12
10
8
6
4
IM
2
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Ta=25°C
Ta=75°C
Ta=100°C
1E+0
Fig. 3-2: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5822).
IM(A)
12
11
10
9
8
7
6
5
4
3
IM
2
1
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Ta=25°C
Ta=75°C
Ta=100°C
1E+0
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
Zth(j-a)/Rth(j-a)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-1
1E+0
tp(s)
1E+1
T
δ=tp/T
1E+2
tp
1E+3
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
600
100
1N5820
1N5822
F=1MHz
Tj=25°C
1N5821
10
1
2
VR(V)
5
10
20
40
3/5
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