KSC945GBU 데이터 시트보기 (PDF) - Fairchild Semiconductor
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KSC945GBU Datasheet PDF : 6 Pages
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Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
Power Dissipation
PD
Derate Above 25°C
250
mW
2.0
mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient
500
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Conditions
IC = 100 μA, IE = 0
IC = 10 mA, IB = 0
IE = 10 μA, IC = 0
VCB = 40 V, IE = 0
VEB = 3 V, IC = 0
VCE = 6 V, IC = 1.0 mA
IC = 100 mA, IB = 10 mA
VCE = 6 V, IC = 10 mA
VCB = 6 V, IE = 0,
f = 1 MHz
Min.
60
50
5
40
NF
Noise Figure
VCE = 6 V, IC = 0.5 mA,
f = 1 kHz, RS = 500 Ω
Typ.
0.15
300
2.5
4.0
Max.
0.1
0.1
700
0.30
Unit
V
V
V
μA
μA
V
MHz
pF
dB
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
L
350 ~ 700
© 2002 Fairchild Semiconductor Corporation
KSC945 Rev. 1.1.0
2
www.fairchildsemi.com
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