30N60A4D 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
30N60A4D Datasheet PDF : 9 Pages
| |||
HGTG30N60A4D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
HGTG30N60A4D,
600
75
60
240
±20
±30
150A at 600V
463
3.7
-55 to 150
260
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
BV CES
I CES
V CE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
V EC
t rr
IC = 250µA, VGE = 0V
VCE = 600V
TJ = 25oC
TJ = 125oC
IC = 30A,
TJ = 25oC
VGE = 15V
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
TJ = 150oC, RG = 3Ω, VGE = 15V,
L = 100µH, VCE = 600V
IC = 30A, VCE = 300V
IC = 30A,
VCE = 300V
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC,
ICE = 30A,
VCE = 390V,
VGE = 15V,
RG = 3Ω,
L = 200µH,
Test Circuit (Figure 24)
IGBT and Diode at TJ = 125oC,
ICE = 30A,
VCE = 390V, VGE = 15V,
RG = 3Ω,
L = 200µH,
Test Circuit (Figure 24)
IEC = 30A
IEC = 30A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
MIN TYP MAX UNITS
600
-
-
V
-
-
250
µA
-
-
2.8
mA
-
1.8
2.6
V
-
1.6
2.0
V
4.5
5.2
7.0
V
-
-
±250
nA
150
-
-
A
-
8.5
-
V
-
225
270
nC
-
300
360
nC
-
25
-
ns
-
12
-
ns
-
150
-
ns
-
38
-
ns
-
280
-
µJ
-
600
-
µJ
-
240
350
µJ
-
24
-
ns
-
11
-
ns
-
180
200
ns
-
58
70
ns
-
280
-
µJ
-
1000 1200
µJ
-
450
750
µJ
-
2.2
2.5
V
-
40
55
ns
-
30
42
ns
©2001 Fairchild Semiconductor Corporation
HGTG30N60A4D Rev. B
Share Link: 