30N60A4D 데이터 시트보기 (PDF) - Fairchild Semiconductor
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30N60A4D Datasheet PDF : 9 Pages
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HGTG30N60A4D
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Thermal Resistance Junction To Case
SYMBOL
RθJC
IGBT
Diode
TEST CONDITIONS
MIN TYP MAX UNITS
-
-
0.27
oC/W
-
-
0.65
oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
60
70
60
50
40
30
20
10
0
25
VGE = 15V
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 500µH
150
100
50
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
TC VGE
300
75oC 15V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100 fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.27oC/W, SEE NOTES
TJ = 125oC, RG = 3Ω, L = 200µH, V CE = 390V
30
3
10
30
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
18
16
14
12
10
8
6
4
10
VCE = 390V, RG = 3Ω, TJ = 125oC
ISC
tSC
11
12
13
14
VGE, GATE TO EMITTER VOLTAGE (V)
900
800
700
600
500
400
300
200
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG30N60A4D Rev. B
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