2SD2581 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD2581 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2581
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
800
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB=B 1.6A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
20
hFE-2
DC Current Gain
tf
Fall Time
IC= 8A ; VCE= 5V
5
IC= 6A , IB1= 1.2A ; IB2= -2.4A
PW=20μs; Duty Cycle≤1%
V
5.0
V
1.5
V
10 μA
1.0 mA
1.0 mA
35
8
0.3 μs
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