2SC4977 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC4977

iscSilicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4977

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A

VBE(sat) Base-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

ICBO

Collector Cutoff Current

VCB= 450V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 8V; IC= 0

hFE

DC Current Gain

IC= 4A ; VCE= 5V

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 5A , IB1= -IB2=1A

RL= 30Ω; VCC= 150V

MIN TYP. MAX UNIT

400

V

450

V

8

V

0.8

V

1.2

V

100 μA

100 μA

10

1.0 μs

2.5 μs

0.5 μs

isc Website：www.iscsemi.cn

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