STD10NM60ND 데이터 시트보기 (PDF) - STMicroelectronics
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STD10NM60ND
STMicroelectronics
STD10NM60ND Datasheet PDF : 19 Pages
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STD10NM60ND, STF10NM60ND, STP10NM60ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
DPAK
VDS Drain-source voltage
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25 °C
8
ID Drain current (continuous) at TC = 100 °C
5
IDM (2) Drain current (pulsed)
32
PTOT Total dissipation at TC = 25 °C
70
dv/dt(3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤8 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS.
Value
TO-220FP
600
± 25
8 (1)
5 (1)
32 (1)
25
40
Unit
TO-220
V
V
8
A
5
A
32
A
70
W
V/ns
2500
V
- 55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Rthj-pcb
TJ
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
DPAK
1.79
62.50
50
Value
TO-220FP
Unit
TO-220
5
1.79
62.50
°C/W
°C/W
°C/W
300
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max)
EAS
Single pulse avalanche energy (starting
TJ=25 °C, ID=IAS, VDD=50 V)
Value
Unit
2.5
A
130
mJ
Doc ID 18467 Rev 2
3/19
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