BT139-600F 데이터 시트보기 (PDF) - TY Semiconductor
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BT139-600F Datasheet PDF : 5 Pages
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Product specification
BT139
25 Ptot / W
20
15
10
BT139
1
Tmb(max) / C 95
= 180
101
120
90
60
107
30
113
5
119
0
125
0
5
10
15
20
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
IT(RMS) / A
20
15
BT139
99 C
10
5
0-50
0
50
100
150
Tmb / C
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
1000 ITSM / A
BT139
100
dIT/dt limit
T2- G+ quadrant
IT
ITSM
T
time
10
10us
100us
Tj initial = 25 C max
1ms
10ms
100ms
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
50 IT(RMS) / A
BT139
40
30
20
10
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
150 ITSM / A
100
50
BT139
IT
ITSM
T
time
Tj initial = 25 C max
01
10
100
1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
VGT(Tj)
1.6 VGT(25 C)
BT136
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
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