SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD880
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=0.5A ; VCE=5V
VCB=60V; IE=0
VEB=7V; IC=0
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10IB1=-10IB2=2A
VCC=30V
PW=30µs
MIN TYP. MAX UNIT
60
V
7
V
1.0
V
1.0
V
100 µA
100 µA
60
300
3
MHz
1.2
µs
2.0
µs
1.1
µs
hFE Classifications
O
Y
GR
60-120 100-200 150-300
2