C4115S(2009) 데이터 시트보기 (PDF) - ROHM Semiconductor

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C4115S
(Rev.:2009)

Low Frequency Transistor (20V, 3A)

ROHM Semiconductor 

Low Frequency Transistor (20V, 3A)

2SC4115S

zFeatures

1) Low VCE(sat).

VCE(sat) = 0.2V(Typ.)

（IC / IB = 2A / 0.1A）

2) Excellent current gain characteristics.

3) Complements the 2SA1585S.

zStructure

Epitaxial planar type

NPN silicon transistor

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Collector-base voltage

VCBO

40

Collector-emitter voltage

VCEO

20

Emitter-base voltage

VEBO

6

Collector current

2

IC

5

Collector power dissipation

PC

0.4

Junction temperature

Tj

150

Storage temperature

∗ Single pulse Pw=10ms

Tstg

−55 to +150

Unit

V

V

V

A (DC)

A (Pulse) ∗

W

°C

°C

zDimensions(Unit:mm)

2SC4115S

4±0.2

2±0.2

0.45+−00..1055

2.5+−00..41

5

(1) (2) (3)

ROHM : SPT

EIAJ : SC-72

∗ Denotes hFE

0.5 0.45−+00..0155

(1) Emitter

(2) Collector

(3) Base

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

40

20

6

−

−

−

120

Transition frequency

Output capacitance

∗ Measured using pulse current.

fT

−

Cob

−

Typ.

−

−

−

−

−

0.2

−

290

25

Max.

−

−

−

0.1

0.1

0.5

390

−

−

Unit

V

V

V

µA

µA

V

−

MHz

pF

Conditions

IC=50µA

IC=1mA

IE=50µA

VCB=30V

VEB=5V

IC/IB=2A/0.1A

∗

VCE=2V, IC=0.1A

VCE=2V, IE= −0.5A, f=100MHz

VCE=10V, IE=0A, f=1MHz

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2009.11 - Rev.B

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