IRF5210L 데이터 시트보기 (PDF) - International Rectifier

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IRF5210L

HEXFET® Power MOSFET

International Rectifier 

IRF5210S/L

VDS

L

RG

-20V

tp

D .U.T

IA S

0 .0 1Ω

DR IVER

VD D

A

15V

Fig 12a. Unclamped Inductive Test Circuit

IAS

2000

ID

TOP

-8 .6 A

-1 5 A

1600

BOTTOM -21A

1200

800

400

0

A

25

50

75

100

125

150

175

Starting TJ , Junction Tem perature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp

V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

-10V

QGS

VG

QG

QGD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

-

+VDS

VGS

-3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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