2SC1008-R 데이터 시트보기 (PDF) - Transys Electronics Limited

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2SC1008-R

TO-92 Plastic-Encapsulated NPN Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-92 Plastic-Encapsulated Transistors

2SC1008 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

0.8 W (Tamb=25℃)

Collector current

ICM:

0.7

A

Collector-base voltage

V(BR)CBO:

80

V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO

Ic= 100µA , IE=0

80

Collector-emitter breakdown voltage V(BR)CEO

IC= 10mA , IB=0

60

Emitter-base breakdown voltage

V(BR)EBO

IE= 10µA, IC=0

8

Collector cut-off current

ICBO

VCB=60 V , IE=0

Emitter cut-off current

IEBO

VEB= 5 V , IC=0

DC current gain

hFE

VCE= 2 V, IC=50mA

40

Collector-emitter saturation voltage

VCE(sat)

IC= 500mA, IB=50 mA

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB=50mA

Transition frequency

fT

VCE=10V, IC= 50mA

30

TYP

MAX

0.1

0.1

400

0.4

1.1

UNIT

V

V

V

µA

µA

V

V

MHz

CLASSIFICATION OF hFE

Rank

Range

R

40-80

O

70-140

Y

120-240

G

200-400

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