2SD1884 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1884 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1884
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8 A
5.0
V
VBEsat Base-emitter saturation voltage
IC=4A;IB=0.8 A
1.5
V
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0
800
V
IEBO
Emitter cut-off current
ICBO
Collector cut-off current
VEB=4V; IC=0
VCB=800V; IE=0
1
mA
10
μA
ICES
Collector cut-off current
VCE=1500V; RBE=0
1
mA
hFE-1
DC current gain
IC=1 A ; VCE=5V
8
hFE-2
tf
固IN电C半H导AN体GE SEMICONDUTOR DC current gain
Fall time
IC=4A ; VCE=5V
IC=4A;RL=50Ω; IB1=0.8A
IB2=-1.6AVCC=200V
5
10
0.1
0.3
μs
2
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