FQD60N03L 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQD60N03L Datasheet PDF : 11 Pages
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Typical Characteristic (Continued)
60
60
TJ = 25 oC
VGS = 10V
VGS = 4.5V
40
40
VGS = 3.5V
20
TJ = 150 oC
TJ = -55 oC
0
1
2
3
4
5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
20
VGS = 3.0V
0
0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
0.5
1.0
1.5
2.0
2.5
VD S, DRAIN TO SOURCE VOLTAGE (V)
Figure 6. Saturation Characteristics
50
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
40
ID = 30A
30
ID = 7.9A
20
10
2
4
6
8
10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
2.0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
-80
VGS = 10V, ID = 30A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE ( oC)
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
1.4
1.2
VGS = VDS , I D = 250µA
1.2
1.1
1.0
ID = 250µA
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE ( oC)
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
©2004 Fairchild Semiconductor Corporation
FQD60N03L Rev. B1
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