D1209 데이터 시트보기 (PDF) - Renesas Electronics

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D1209

Silicon NPN Epitaxial, Darlington

Renesas Electronics 

2SD1209(K)

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Note: 1. Pulse test

Symbol

V(BR)CBO

ICEO

IEBO

hFE

VCE(sat)

VBE(sat)

Min

60

—

—

4000

—

—

Typ

—

—

—

—

—

—

Max

—

100

100

—

1.5

2.0

Unit

V

µA

µA

V

V

(Ta = 25°C)

Test conditions

IC = 0.1 mA, IE = 0

VCE = 60 V, RBE = ∞

VEB = 7 V, IC = 0

VCE = 3 V, IC = 0.5 A*1

IC = 500 mA, IB = 0.5 mA*1

IC = 500 mA, IB = 0.5 mA*1

Rev.2.00 Aug 10, 2005 page 2 of 5

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