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MTP15N06VL

TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate

Motorola => Freescale 

MTP15N06VL

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

(Cpk ≥ 2.0) (3)

V(BR)DSS

60

—

—

Vdc

—

68

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

(Cpk ≥ 2.0) (3)

IDSS

IGSS

VGS(th)

µAdc

—

—

10

—

—

100

—

—

100

nAdc

Vdc

1.0

1.5

2.0

—

4.0

—

mV/°C

Static Drain–to–Source On–Resistance

(VGS = 5.0 Vdc, ID = 7.5 Adc)

(Cpk ≥ 2.0) (3)

Drain–to–Source On–Voltage

(VGS = 5.0 Vdc, ID = 15 Adc)

(VGS = 5.0 Vdc, ID = 7.5 Adc, TJ = 150°C)

Forward Transconductance (VDS = 8.0 Vdc, ID = 7.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(VDD = 30 Vdc, ID = 15 Adc,

VGS = 5.0 Vdc,

RG = 9.1 Ω)

(VDS = 48 Vdc, ID = 15 Adc,

VGS = 5.0 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 15 Adc, VGS = 0 Vdc)

(IS = 15 Adc, VGS = 0 Vdc, TJ = 150°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

Ohm

—

0.075 0.085

Vdc

—

—

1.5

—

—

1.3

8.0

10

—

mhos

—

570

800

pF

—

180

250

—

45

90

—

11

20

ns

—

150

300

—

27

50

—

70

140

—

32

40

nC

—

3.0

—

—

7.0

—

—

11

—

Vdc

—

0.96

1.6

—

0.85

—

Reverse Recovery Time

Reverse Recovery Stored Charge

(IS = 15 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

ta

tb

QRR

—

63

—

ns

—

42

—

—

21

—

—

0.140

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die.)

(Measured from the drain lead 0.25″ from package to center of die)

LD

nH

—

3.5

—

—

4.5

—

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

nH

—

7.5

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Max limit – Typ

Cpk = 3 x SIGMA

2

Motorola TMOS Power MOSFET Transistor Device Data

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