TPC8116-H 데이터 시트보기 (PDF) - Toshiba
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TPC8116-H Datasheet PDF : 7 Pages
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Electrical Characteristics (Ta = 25°C)
TPC8116-H
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯ ±10 µA
IDSS
VDS = −40 V, VGS = 0 V
⎯
⎯ −10 µA
V (BR) DSS
V (BR) DSX
ID = −10 mA, VGS = 0 V
ID = −10 mA, VGS = 20 V
−40 ⎯
⎯
V
−20 ⎯
⎯
Vth
VDS = −10 V, ID = −1 mA
−0.8
⎯ −2.0
V
RDS (ON)
VGS = −4.5 V, ID = − 3.8 A
VGS = −10 V, ID = − 3.8 A
⎯
29
37
mΩ
⎯
24
30
|Yfs|
VDS = −10 V, ID = − 3.8 A
7
14
⎯
S
Ciss
⎯ 1190 ⎯
Crss
VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯
170
⎯
pF
Coss
⎯
250
⎯
tr
VGS 0 V
-10 V
ID = − 3.8 A
⎯
5
⎯
VOUT
ton
⎯
12
⎯
ns
tf
⎯
12
⎯
Duty
<=
1%,
tw
=
10
VDD
µs
∼−
−20
V
toff
⎯
43
⎯
Qg
Qgs1
Qgd
QSW
VDD ∼− −32 V, VGS =−10V, ID =
−7.5A
VDD ∼− −32 V, VGS = −5 V, ID =
− 7.5A
VDD ∼− −32 V, VGS = −10 V, ID =
− 7.5A
⎯
27
⎯
⎯
15
⎯
nC
⎯
3.2
⎯
⎯
8.1
⎯
⎯
9.7
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
IDRP
VDSF
Test Condition
⎯
IDR = −7.5 A, VGS = 0 V
Min Typ. Max Unit
⎯
⎯ −30
A
⎯
⎯
1.2
V
3
2006-01-17
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