2SD864K 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SD864K

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD864(K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 120

—

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

ICBO

ICEO

hFE

VCE(sat)1

—

—

—

—

1000 —

—

—

VCE(sat)2

—

—

Base to emitter saturation

VBE(sat)1

—

—

voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test.

VBE(sat)2

—

—

ton

—

0.5

tstg

—

4.5

tf

—

1.1

Max

—

Unit

V

Test conditions

IC = 25 mA, RBE = _

—

V

IE = 50 mA, IC = 0

100 µA

10

µA

20000

1.5 V

VCB = 120 V, IE = 0

VCE = 100 V, RBE = _

VCE = 3 V, IC = 1.5 A*1

IC = 1.5 A, IB = 3 mA*1

3.0 V

2.0 V

IC = 3 A, IB = 30 mA*1

IC = 1.5 A, IB = 3 mA*1

3.5 V

—

µs

—

µs

—

µs

IC = 3 A, IB = 30 mA*1

IC = 1.5 A, IB1 = –IB2 = 3 mA

2

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