BA885(2004) 데이터 시트보기 (PDF) - Infineon Technologies

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BA885
(Rev.:2004)

Silicon PIN Diode

Infineon Technologies 

BA595/BA885/BA895...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Reverse current

VR = 30 V

Forward voltage

IF = 50 mA

IR

-

-

20 nA

VF

-

-

1.1 V

AC Characteristics

Diode capacitance

CT

VR = 0 V, f = 100 MHz

VR = 10 V, f = 1 MHz

Reverse parallel resistance

RP

VR = 1 V, f = 100 MHz

VR = 0 V, f = 1 GHz

Forward resistance

rf

IF = 1.5 mA, f = 100 MHz

IF = 10 mA, f = 100 MHz

Charge carrier life time

τ rr

IF = 10 mA, IR = 6 mA, measured at IR = 3 mA ,

RL = 100 Ω

I-region width

WI

pF

- 0.26 0.4

- 0.22 0.6

kΩ

-

50

-

-

10

-

Ω

-

22 40

-

4.5

7

- 1600 - ns

- 130 - µm

2

Apr-06-2004

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