ME4953-G 데이터 시트보기 (PDF) - Unspecified

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ME4953-G

Dual P-Channel 30V (D-S) MOSFET

Unspecified 

Dual P-Channel 30V (D-S) MOSFET

ME4953/ME4953-G

Electrical Characteristics (TA =25℃ Unless Otherwise Specified)

Symbol Parameter

Limit

Min Typ

STATIC

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250μA

-1 -1.4

IGSS

Gate Leakage Current

VDS=0V, VGS=±20V

VDS=-30V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=-30V, VGS=0V

TJ=55℃

VGS=-10V, ID= -5.3A

50

RDS(ON)

Drain-Source On-Resistance

VGS=-4.5V, ID= -4.2A

69

VSD

Diode Forward Voltage

IS=-1.7A, VGS=0V

-0.8

DYNAMIC

Rg

Gate resistance

Ciss

Input capacitance

VDS=0V, VGS=0V, f=1MHz

3.5

450

Coss

Output Capacitance

VDS=-15V, VGS=0V, f=1.0MHz

70

Crss

Reverse Transfer Capacitance

20

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

14

VDS=-15V, VGS=-10V,

4

ID=-5.3A

3

td(on)

tr

td(off)

tf

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

27

VDD=-15V, RL =15Ω

11

ID=-1.0A, VGEN=-10V

40

RG=6Ω

4

Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%

Max Unit

-3

V

±100 nA

-1

μA

-25

60

mΩ

90

-1.2

V

Ω

490

pF

17

nC

33

15

ns

52

6

JuAlpy,r,22000087-V-Veerr43.0.0

02 Free Datasheet http://www.datasheet-pdf.com/

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