MAC210-8 데이터 시트보기 (PDF) - Motorola => Freescale

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MAC210-8

Triacs Silicon Bidirectional Thyristors

Motorola => Freescale 

MAC210 Series MAC210A Series

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Peak Blocking Current

(VD = Rated VDRM, Gate Open) TJ = 25°C

TJ = +125°C

p Peak On-State Voltage (Either Direction)

(ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)

Gate Trigger Current (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

(Main Terminal Voltage = Rated VDRM, RL = 10 k ohms,

TJ = +125°C)

MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,

Initiating Current = 500 mA, TC = +25°C)

Turn-On Time

(Rated VDRM, ITM = 14 A)

(IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,

Gate Unenergized, TC = 70°C)

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Voltage Rise,

Gate Open, TC = +70°C)

Symbol

Max

RθJC

2.2

Symbol

IDRM

VTM

IGT

VGT

Min

Typ

—

—

—

—

—

1.2

—

12

—

12

—

20

—

35

—

0.9

—

0.9

—

1.1

—

1.4

0.2

—

0.2

—

IH

—

6

tgt

dv/dt(c)

—

1.5

—

5

dv/dt

—

100

Unit

°C/W

Max

Unit

10

µA

2

mA

1.65

Volts

mA

50

50

50

75

volts

2

2

2

2.5

—

—

50

mA

—

µs

—

V/µs

—

V/µs

3–76

Motorola Thyristor Device Data

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