MAC210A4FP 데이터 시트보기 (PDF) - Motorola => Freescale

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MAC210A4FP

Triacs Silicon Bidirectional Thyristors

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MAC210FP/D

Triacs

Silicon Bidirectional Thyristors

MAC210FP

Series

MAC210AFP

Series

. . . designed primarily for full-wave ac control applications, such as light dimmers,

motor controls, heating controls and power supplies; or wherever full-wave silicon

gate controlled solid-state devices are needed. Triac type thyristors switch from a

blocking to a conducting state for either polarity of applied anode voltage with positive

or negative gate triggering.

• Blocking Voltage to 800 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

• Gate Triggering Guaranteed in Three Modes (MAC210FP Series)

or Four Modes (MAC210AFP Series)

MT2

MT1

G

ISOLATED TRIACs

THYRISTORS

10 AMPERES RMS

200 thru 800 VOLTS

CASE 221C-02

STYLE 3

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating

Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C)

1/2 Sine Wave 50 to 60 Hz, Gate Open

MAC210-4FP, MAC210A4FP

MAC210-6FP, MAC210A6FP

MAC210-8FP, MAC210A8FP

MAC210-10FP, MAC210A10FP

On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)

Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)

preceded and followed by rated current

Symbol

VDRM

IT(RMS)

ITSM

Value

200

400

600

800

10

100

Unit

Volts

Amps

Amps

Circuit Fusing (t = 8.3 ms)

I2t

40

A2s

Peak Gate Power (TC = +70°C, Pulse Width = 10 µs)

Average Gate Power (TC = +70°C, t = 8.3 ms)

Peak Gate Current (TC = +70°C, Pulse Width = 10 µs)

p RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)

Operating Junction Temperature

Storage Temperature Range

THERMAL CHARACTERISTICS

PGM

PG(AV)

IGM

V(ISO)

TJ

Tstg

20

0.35

2

1500

–40 to +125

–40 to +125

Watts

Watt

Amps

Volts

°C

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

2.2

°C/W

Thermal Resistance, Case to Sink

RθCS

2.2 (typ)

°C/W

Thermal Resistance, Junction to Ambient

RθJA

60

°C/W

1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

2.ThecasetemperaturereferencepointforallTCmeasurements isapointonthecenterleadofthepackageascloseaspossibletotheplasticbody.

Motorola Thyristor Device Data

1

© Motorola, Inc. 1995

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