RT5N141C 데이터 시트보기 (PDF) - Isahaya Electronics
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RT5N141C Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V I(on)
V I(off)
VCE(sat)
IBE
ICES
GI
R1
R2/R1
fT
PARAMETER
Input on voltage
Input off voltage
C to E saturation voltage
B to E current
Collector cut off current
DC forward current gain
Input resistor
Resistor ratio
Gain band width product
TEST CONDITION
VCE=0.3V，IC=10mA
VCE=5V，IC=100μA
IC=50mA，IB=2.5mA
VEB=5V
VCE=50V，VBE=0V
VCE=5V，IE=50mA
―
―
VCE=10V，IE=-5mA，f=100MHz
RT5N141C
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MIN
―
0.5
―
―
―
56
7
0.8
―
LIMIT
TYP
―
―
0.1
―
―
―
10
1
200
MAX
3
―
0.3
0.88
0.5
―
13
1.2
―
UNIT
V
V
V
mA
μA
―
kΩ
MHz
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION
VS.AMBIENT TEMPERATURE
250
200
150
100
50
0
0
50
100
150
AMBIENT TEMPERATURE Ta (℃)
COLLECTOR CURRENT
VS.INPUT OFF VOLTAGE
10
VCE=5V
1000
DC FORWARD CURRENT GAIN
VS.COLLECTOR CURRENT
VCE=5V
100
10
1
1
10
100
1000
COLLECTOR CURRENT Ic (mA)
INPUT ON VOLTAGE
VS.COLLECTOR CURRENT
100
VCE=0.3V
1
10
0.1
1
0.01
0.0
0.4
0.8
1.2
1.6
2.0
INPUT OFF VOLTAGE VI(off) (V)
0.1
1
10
100
COLLECTOR CURRENT Ic (mA)
1000
ISAHAYA ELECTRONICS CORPORATION
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