VN0300LRLRA 데이터 시트보기 (PDF) - STMicroelectronics

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VN0300LRLRA

Small Signal MOSFET 200 mAmps, 60 Volts N–Channel TO–92

STMicroelectronics 

VN0300L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

STATIC CHARACTERISTICS

Drain–Source Breakdown Voltage

(VDS = 0, ID = 10 µA)

Zero Gate Voltage Drain Current

(VDS = 48 Vdc, VGS = 0)

(VDS = 48 Vdc, VGS = 0, TA = 125°C)

Gate–Body Leakage

(VDS = 0, VGS = ±30 V)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mA)

On–State Drain Current (Note 1.)

(VDS = VGS, ID = 1.0 mA)

Drain–Source On Resistance (Note 1.)

(VGS = 5.0 V, ID = 0.3 A)

(VGS = 10 V, ID = 1.0 A)

Forward Transconductance (Note 1.)

(VDS = 10 V, ID = 0.5 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 15 Vdc, VGS = 0,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS

Turn–On Time

Turn–Off Time

(VDD = 25 Vdc, ID = 1.0 A,

RL = 24 Ω, RG = 25 Ω)

1. Pulse Test; Pulse Width < 300 ms, Duty Cycle v 2.0%.

Symbol

Min

Max

Unit

V(BR)DSS

30

–

V

IDSS

IGSS

µA

–

10

–

500

–

±100

nA

VGS(th)

0.8

2.5

V

ID(on)

1.0

–

A

rDS(on)

Ω

–

3.3

–

1.2

gfs

200

–

mS

Ciss

–

100

pF

Coss

–

95

pF

Crss

–

25

pF

ton

–

30

ns

toff

–

30

ns

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