2SD1577 데이터 시트보기 (PDF) - Inchange Semiconductor
부품명
상세내역
제조사
2SD1577 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1577
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A
VBEsat Base-emitter saturation voltage
IC=4.5A ;IB=2A
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
ICBO
Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=2A ; VCE=10V
Switching times
tstg
Storage time
tf
Fall time
IC=4A; LB=10μH
IBend=1.5A
MIN TYP. MAX UNIT
2.0
V
1.3
V
6
V
50
μA
1
mA
50
μA
4
15
11
μs
1
μs
2
Share Link: 