STD9NM60N 데이터 시트보기 (PDF) - STMicroelectronics

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STD9NM60N

N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET

STMicroelectronics 

STD9NM60N

STF9NM60N, STP9NM60N

N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK

MDmesh™ II Power MOSFET

Features

Order codes

STD9NM60N

STF9NM60N

STP9NM60N

VDSS

(@Tjmax)

RDS(on)

max.

650 V < 0.745 Ω

ID

6.5 A

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

Switching applications

Description

This series of devices is realized with the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

3

2

1

TO-220FP

3

2

1

TO-220

3

1

DPAK

Figure 1. Internal schematic diagram

$

'

3

Table 1. Device summary

Order codes

STD9NM60N

STF9NM60N

STP9NM60N

Marking

9NM60N

Packages

DPAK

TO-220FP

TO-220

!-V

Packaging

Tape and reel

Tube

October 2010

Doc ID 18063 Rev 1

1/16

www.st.com

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