9NM60N 데이터 시트보기 (PDF) - STMicroelectronics

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9NM60N

N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET

STMicroelectronics 

STD9NM60N, STF9NM60N, STP9NM60N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM (2)

PTOT

VISO

dv/dt (3)

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

Peak diode recovery voltage slope

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 6.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-pcb (1)

Thermal resistance junction-case max

Thermal resistance junction-pcb minimum

footprint

Rthj-amb

Tl

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

purpose

1. When mounted on 1inch² FR-4 board, 2 oz Cu

Value

Unit

TO-220, DPAK TO-220FP

600

V

± 25

V

6.5

6.5 (1)

A

4

4 (1)

A

26

26 (1)

A

70

25

W

2500

V

15

- 55 to 150

150

V/ns

°C

°C

Value

Unit

DPAK TO-220 TO-220FP

1.79

5

°C/W

50

°C/W

62.5

°C/W

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Value

Unit

2.5

A

115

mJ

Doc ID 18063 Rev 1

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