STD9NM60N 데이터 시트보기 (PDF) - STMicroelectronics

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STD9NM60N

N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET

STMicroelectronics 

STD9NM60N, STF9NM60N, STP9NM60N

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 480 V, ID = 6.5 A

RG = 4.7 Ω VGS = 10 V

(see Figure 17)

Min. Typ. Max. Unit

28

ns

23

ns

-

-

52.5

ns

26.7

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM (1) Source-drain current (pulsed)

6.5 A

-

26 A

VSD (2) Forward on voltage

ISD = 6.5 A, VGS = 0

-

1.6 V

trr

Reverse recovery time

ISD = 6.5 A, di/dt = 100 A/µs

264

ns

Qrr Reverse recovery charge

VDD = 60 V

- 1.9

µC

IRRM Reverse recovery current

(see Figure 22)

14.6

A

trr

Reverse recovery time

ISD = 6.5 A, di/dt = 100 A/µs

324

ns

Qrr Reverse recovery charge

VDD = 60 V, Tj = 150 °C

- 2.3

µC

IRRM Reverse recovery current

(see Figure 22)

14.2

A

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Doc ID 18063 Rev 1

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