2SC5449 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC5449

Silicon NPN Triple Diffused Character Display Horizntal Deflection Output

Hitachi -> Renesas Electronics 

2SC5449

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at Tc = 25°C

Symbol

VCBO

VCEO

VEBO

IC

ic(peak)

P Note1

C

Tj

Tstg

Ratings

1500

700

6

12

24

50

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector to emitter

breakdown voltage

Emitter to base

breakdownvoltage

Collector cutoff current

DC current transfer ratio

DC current transfer ratio

Collector to emitter

saturationvoltage

Base to emitter

saturationvoltage

Fall time

Symbol

V(BR)CEO

Min

700

V(BR)EBO

6

ICES

—

hFE1

10

hFE2

3.5

VCE(sat)

—

VBE(sat)

—

tf

—

Fall time

tf

—

Typ

—

—

—

—

—

—

—

0.2

0.15

Max

—

—

500

30

6.5

5

1.5

0.4

—

Unit

V

V

µA

V

V

µs

µs

Test Conditions

IC = 10mA, RBE = ∞

IE = 10mA, IC = 0

VCE = 1500V, RBE = 0

VCE = 5 V, IC = 1A

VCE = 5 V, IC = 7A

IC = 7A, IB = 1.8A

IC = 7A, IB = 1.8A

ICP = 6A, IB1 = 2A

fH = 31.5kHz

ICP = 6A, IB1 = 1.5A

fH = 64kHz

2

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