BUP313D 데이터 시트보기 (PDF) - Siemens AG

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BUP313D

IGBT With Antiparallel Diode

Siemens AG 

BUP 313D

IGBT With Antiparallel Diode

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Including fast free-wheel diode

Type

BUP 313D

VCE IC

1200V 32A

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

RGE = 20 kΩ

Gate-emitter voltage

DC collector current

TC = 25 °C

TC = 90 °C

Pulsed collector current, tp = 1 ms

TC = 25 °C

TC = 90 °C

Diode forward current

TC = 90 °C

Pulsed diode current, tp = 1 ms

TC = 25 °C

Power dissipation

TC = 25 °C

Chip or operating temperature

Storage temperature

Package

TO-218 AB

Symbol

VCE

VCGR

VGE

IC

ICpuls

IF

IFpuls

Ptot

Tj

Tstg

Pin 1

G

Pin 2

C

Pin 3

E

Ordering Code

Q67040-A4228-A2

Values

Unit

1200

V

1200

± 20

A

32

20

64

40

18

108

W

200

-55 ... + 150 °C

-55 ... + 150

Semiconductor Group

1

Dec-02-1996

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