BD2270HFV-TR 데이터 시트보기 (PDF) - ROHM Semiconductor

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BD2270HFV-TR

MOSFET Controller IC for Load Switching

ROHM Semiconductor 

BD2270HFV

Technical Note

●Electrical Characteristics

(Vcc =3.0V, Ta=25°C unless otherwise specified)

Parameter

Operating current

Standby current

Symbol

ICC

ISTB

Min.

-

-

Limits

Typ.

50

5

Max.

75

10

Unit

Condition

μA VAEN = 2.5V

μA VAEN = 0V

AEN input voltage

AEN input current

VAENH 1.55

2

2.45

V High level input

VAENL

1.35

1.9

2.35

V Low level input

IAEN

-

3

5

μA VAEN = 3V

GATE output voltage

10

13.5

15

VGATE

6.6

9.5

9.9

6

8.5

9

V VCC=5V

V VCC=3.3V

V VCC=3V

GATE rise time

GATE fall time

TON

-

130

750

μs

CGATE=500pF VCC=3Ｖ

VGATE > 4V

TOFF

-

18

60

μs

CGATE = 500pF VCC=3V

VGATE < 0.5V

DISC discharge resistance

RDISC

-

200 300

Ω VAEN=0V

●Measurement Circuit

●Timing Diagram

VCC GATE DISC

AEN

GND

ON/OFF

BD2270HFV

Fig.1 Measurement Circuit

CGATE

VAEN

VGATE

VAENH

TON2

TON1

VCC+2V

VCC+1V

Fig.2 Timing Diagram

VAENL

TOFF

0.5V

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2/12

2009.04 - Rev.A

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