2N4117A 데이터 시트보기 (PDF) - Vishay Semiconductors
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2N4117A Datasheet PDF : 5 Pages
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2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
100
VGS(off) = −0.7 V
VDS = 10 V
80
60
TA = 125_C
40
25_C
Transconductance vs. Gate-Source Voltage
200
VGS(off) = −0.7 V
160
TA = −55_C
VDS = 10 V
f = 1 kHz
25_C
120
80
125_C
20
0
0
500
400
−55_C
−0.2
−0.4
−0.6
−0.8
VGS − Gate-Source Voltage (V)
−1.0
Transfer Characteristics
VGS(off) = −2.5 V
VDS = 10 V
TA = −55_C
300
25_C
200
100
125_C
40
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
300
VGS(off) = −2.5 V
240
VDS = 10 V
f = 1 kHz
TA = −55_C
180
25_C
120
125_C
60
0
0
−1
−2
−3
−4
−5
VGS − Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100
gfs RL
AV + 1 ) RLgos
80
Assume VDD = 15 V, VDS = 5 V
60
RL
+
10 V
ID
VGS(off) = −0.7 V
40
0
0
−1
−2
−3
−4
−5
VGS − Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
2.0
f = 1 MHz
1.6
1.2
VDS = 0 V
10 V
0.8
20
−2.5 V
0
0.01
0.1
1
ID − Drain Current (mA)
www.vishay.com
4
0.4
0
0
−4
−8
−12
−16
−20
VGS − Gate-Source Voltage (V)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
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